Green and Blue Emission from Stain-Etched Porous Silicon

R. K. Tyagi¹ and Pankaj Pathak²

¹Department of Physics, Government (P.G.) College, Khatima, U.S.Nagar (India).

²Department of Physics, S.S.V. (P.G.) College, Hapur, Gaziabad (India).

DOI : http://dx.doi.org/10.13005/msri/040236

ABSTRACT:

Visible light emission is reported from boron doped p+ type porous silicon films. These films were prepared by stain etched method. In this method KOH pallets were used in de-ionized water at 75?C for etching silicon samples. Blue and green light area observed from these porous silicon samples. The visible photoluminescence originates from direct transitions between energy levels in the quantum wells.

KEYWORDS: Porous silicon(PC); photoluminescence (PL); Quantum Wells; quantum wires; stain-etching

Copy the following to cite this article: Tyagi R. K, Pathak P. Green and Blue Emission from Stain-Etched Porous Silicon. Mat.Sci.Res.India;4(2)

Copy the following to cite this URL: Tyagi R. K, Pathak P. Green and Blue Emission from Stain-Etched Porous Silicon. Available from: http://www.materialsciencejournal.org/?p=1809

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