Memory-Switching Effect in Gase Single Crystals

A. A. Al-Ghamdi¹*, S. A. Hussein² and M. M. Nassary²

¹Department of Phyics, Faculty of Science, King Abdul Aziz University Jeddah (Saudia Arabia)

²Physics Department, Faculty of Science, South Valley University, Qena (Egypt)

DOI : http://dx.doi.org/10.13005/msri/020210

ABSTRACT:

Investigation of switching effect GaSe shows that the parameters are sensitive to temperature, light intensity and sample thickness. The specimen under test showd thershold field of the swtiching being (0.25 ? 103 V/cm) at room temperature. The switiching process takes place with both polarities on the crystal and has symmetrical shapes. The memory state persists if the suddenly, the specimen returns to the high resistance state, Ga Se with such properties can be used as switching elements in the electronic devices

KEYWORDS: GaSe; Single crystals; Memory-switching effect

Copy the following to cite this article: Al-Ghamdi A. A, Hussein S. A, Nassary M. M. Memory-Switching Effect in Gase Single Crystals. Mat.Sci.Res.India;2(2)

Copy the following to cite this URL: Al-Ghamdi A. A, Hussein S. A, Nassary M. M. Memory-Switching Effect in Gase Single Crystals. Mat.Sci.Res.India;2(2). Available from: http://www.materialsciencejournal.org/?p=3182

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