Temperature Viration on the Suface Conductance of Metal-Semidonductor Contacts,

S. S. Olugamo*, J. S. Ojo and E. O. Alaje

Department of Physics the Federal University of Technology (Akure)

DOI : http://dx.doi.org/10.13005/msri/020203

ABSTRACT:

The temperature variation on he surface conductance of different metal-semiconductor contants had been caried out in this temperatures 300-400K. The current in the samples increases with increases in volt age and temperature. Samples Sb/Si and Bi/Si showed linear relationship over specificed voltage range (ie.e 0-60V) and seems to saturate at higher volages. The Al/Ge samples was found to be ohmic over the given range 0.05V. The surfac conductances was found to increase with increase in temperature for all the samples and the plots of LnG against temperature give curvature which conforms with the three distinct regions of conductivity mechanims in semiconductro materisl at varied temperature. The difference in the direction of the curvature of the Al/Ge samples is attributed to the thickness and nature of the contacts between the Al and the Ge films. The study equally revealed that the sample behave more of semiconductor than metal.Hence temperature vatiation had effects on metal semiconductor film contacts.

KEYWORDS: Temperature; Condcutance; metal-semicondductors

Copy the following to cite this article: Olugamo S. S, Ojo J. S, Alaje E. O. Temperature Viration on the Suface Conductance of Metal-Semidonductor Contacts,. Mat.Sci.Res.India;2(2)

Copy the following to cite this URL: Olugamo S. S, Ojo J. S, Alaje E. O. Temperature Viration on the Suface Conductance of Metal-Semidonductor Contacts,. Mat.Sci.Res.India;2(2). Available from: http://www.materialsciencejournal.org/?p=3161

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