Effect of Aluminum Mole Fraction on the Hamiltonian of Gan/Algan Quantum Dot Laser Diode

Ujwala Zope, Gauri Kasar, E. P. Samuel and D. S. Patil*

Department of Electronics, North Maharashtra University, Jalgaon (India)

DOI : http://dx.doi.org/10.13005/msri/050128

ABSTRACT:

Analysis of the electron and hole transport in the quantum dot laser diode has been carried out in this paper. The electron and hole quantum dot potential has been deduced using the transfer matrix method and an iterative method have been utilize for computation of Eigen energy. The Hamiltonian is very useful to approximate the extent of the wave function within the quantum dot. The over all Hamiltonian for the quantum dot has been obtained and the normalized Eigen frequency has been deduced in the paper which is very essential for the analysis of the radiated spectra within the quantum dot region.

KEYWORDS: Aluminum mole fraction; Hamiltonian; quantum dot laser diode

Copy the following to cite this article: Zope U, Kasar G, Samuel E. P, Patil D. S. Effect of Aluminum Mole Fraction on the Hamiltonian of Gan/Algan Quantum Dot Laser Diode. Mat.Sci.Res.India;5(1)

Copy the following to cite this URL: Zope U, Kasar G, Samuel E. P, Patil D. S. Effect of Aluminum Mole Fraction on the Hamiltonian of Gan/Algan Quantum Dot Laser Diode. Mat.Sci.Res.India;5(1). Available from: http://www.materialsciencejournal.org/?p=1959

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