Exploration of Electron Confinement in Multiple Quantum Well Using III-V Semiconductor Materials

Kanchan Talele and D. S. Patil

Department of Electronics, North Maharashtra University, Jalgaon (India)

ABSTRACT:

Multiple quantum well laser diode has shown the advantage over other semi-conducting heterostructure laser. The electron transport phenomenon makes the multiple quantum well laser diode most powerful from existing laser diode. The Schr?dinger equation has been solved to realize the electron confinement in multiple quantum well regions by using quasi-transmitting boundary method. The 30% of Aluminum mole fraction is taken for the analysis and the Eigen energy found to be 0.2356eV and 0.2070eV for three and four quantum well respectively.

KEYWORDS: Electron confinement; III-V semiconductor materials

Copy the following to cite this article: Talele K, Patil D. S. Exploration of Electron Confinement in Multiple Quantum Well Using III-V Semiconductor Materials. Mat.Sci.Res.India;5(1)

Copy the following to cite this URL: Talele K, Patil D. S. Exploration of Electron Confinement in Multiple Quantum Well Using III-V Semiconductor Materials. Mat.Sci.Res.India;5(1). Available from: http://www.materialsciencejournal.org/?p=1971

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