Hole-Phonon Scattering Mechanism in Iii-V Semiconductor Multiple Quantum Wells

Smruti Motarwar, Kanchan Talele, E.P. Samuel and D.S. Patil

Department of Electronics, North Maharashtra University, Jalgaon (India)

ABSTRACT:

Analysis of carrier transport while moving through GaN multiple quantum well has been carried out through phonon scattering using Fermi Golden rule. Hole capture in a Gallium Nitride quantum wells has been carried out with hole-optical phonon scattering mechanism using semi-classical approach. Our analysis show that the hole capture time vary as a function of the excess energy, quantum well width, barrier width and aluminum (Al) mole fraction in the barrier layer. Strong dependence of hole capture time on mole fraction x in the barrier layer of AlxGa1-xN has been attributed to the variation of energy and barrier height. The form factor varies in an oscillatory manner with the change in energy.

KEYWORDS: Carrier transport; phonon scattering and Fermi Golden rule

Copy the following to cite this article: Motarwar S, Talele K, Samuel E. P, Patil D. S. Hole-Phonon Scattering Mechanism in Iii-V Semiconductor Multiple Quantum Wells. Mat.Sci.Res.India;5(1)

Copy the following to cite this URL: Motarwar S, Talele K, Samuel E. P, Patil D. S. Hole-Phonon Scattering Mechanism in Iii-V Semiconductor Multiple Quantum Wells. Mat.Sci.Res.India;5(1). Available from: http://www.materialsciencejournal.org/?p=1981

---

This work is licensed under a Creative Commons Attribution 4.0 International License.