Effect of Palladium Incorportaion on Electrical Properties of Zno

P. Mitra

Department of Physics, The University of Burdwan, Golapbag, Burdwan - 713 104 (India).

DOI : http://dx.doi.org/10.13005/msri/060226

ABSTRACT:

The electrical characteristic of palladium incorporated zinc oxide thin film was carried out by monitoring the variation of electrical resistance with temperature (T) in the temperature range 300-480K. It was observed that Pd doping increases the resistance and also increases the low temperature activation barrier value to ~0.43 eV compared to ~0.3 eV for undoped ZnO films.

KEYWORDS: ZnO; Pd doping; activation barrier

Copy the following to cite this article: Mitra P. Effect of Palladium Incorportaion on Electrical Properties of Zno. Mat.Sci.Res.India;6(2)

Copy the following to cite this URL: Mitra P. Effect of Palladium Incorportaion on Electrical Properties of Zno. Mat.Sci.Res.India;6(2). Available from: http://www.materialsciencejournal.org/?p=3578

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